SI2308BDS-T1-E3【PDF 1/10 页】MOSFET N-CH 60V 2.3A SOT23-3

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New Product

Si2308BDS

Vishay Siliconix

N-Channel 60-V (D-S) MOSFET

PRODUCT SUMMARY

V DS (V) R DS(on) ( Ω )

I D (A) a

Q g (Typ.)

FEATURES

? Halogen-free According to IEC 61249-2-21

Available

0.156 at V GS = 10 V

0.192 at V GS = 4.5 V

2.3

2.1

2.3 nC

? TrenchFET ? Power MOSFET

? 100 % R g Tested

? 100 % UIS Tested

APPLICATIONS

? Battery Switch

? DC/DC Converter

TO-236

(SSOT23)

Top V ie w

Si230 8 BDS (L 8 )*

*Marking Code

Orderin g Information: Si230 8 BDS-T1-E3 (Lead (P b )-free)

Si230 8 BDS-T1-GE3 (Lead (P b )-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

T C = 25 °C

Symbol

V DS

V GS

Limit

± 20

2.3

Unit

Continuous Drain Current (T J = 150 °C)

T C = 70 °C

T A = 25 °C

I D

1.8

1.9 b, c

Pulsed Drain Current

Continuous Source-Drain Diode Current

Avalanche Current

Single-Pulse Avalanche Energy

T A = 70 °C

T C = 25 °C

T A = 25 °C

L = 0.1 mH

I DM

I S

I AS

E AS

1.5 b, c

1.39

0.91 b, c

1.8

T C = 25 °C

1.66

Maximum Power Dissipation

T C = 70 °C

T A = 25 °C

P D

1.06

1.09 b, c

T A = 70 °C

0.7 b, c

Operating Junction and Storage Temperature Range

T J , T stg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient b, d ≤ 5s

Maximum Junction-to-Foot (Drain) Steady State

Symbol

R thJA

R thJF

Typical

Maximum

115

Unit

°C/W

Notes:

a. Based on T C = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under Steady State conditions is 130 °C/W.

Document Number: 69958

S-83053-Rev. B, 29-Dec-08

www.vishay.com

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